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GIGABYTE AORUS Gen4 1TB SSD M.2 NVMe SSD

Gigabyte

GIGABYTE AORUS Gen4 M.2 2280 1TB PCI-Express 4.0 x4, NVMe 1.3 3D TLC Internal Solid State Drive (SSD) GP-AG41TB

  • Form Factor: M.2 2280
  • Interface: PCI-Express 4.0 x4, NVMe 1.3
  • Total Capacity: 1000GB*
  • Sequential Read Speed : up to 5000 MB/s**
  • Sequential Write speed : up to 4400 MB/s**
  • Wear Leveling, Over-Provision technologies
  • TRIM & S.M.A.R.T supported

 24,500.00

GIGABYTE AORUS Gen4 M.2 2280 1TB PCI-Express 4.0 x4, NVMe 1.3 3D TLC Internal Solid State Drive (SSD) GP-AG41TB

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AORUS Gen4 SSD 1TB

World First PCIe 4.0×4 Controller

The World First PCIe 4.0×4 Controller, Phison PS5016-E16 controller, made by 28nm manufacturing technology. The advanced fabrication process ensures PS5016-E16 has enough compute power for ECC processing when adopting the latest 3D TLC NAND flash. PS5016-E16 also features eight NAND channels with 32 CE targets, DDR4 DRAM cache, and a PCIe 4.0×4 interface. As for features, the chip supports the NVMe 1.3 protocol, LDPC error correction, and Wear Leveling, Over-Provision technologies to improve the reliability and durability of SSDs.

Selected High Speed 3D TLC NAND Flash (800MT/s)

The selected and high quality NAND Flash optimizes circuitry and architecture by increasing to 96 layers for higher storage space per unit area. 800MT/s throughput on the AORUS Gen 4 SSD far exceeds that of PCIe 3.0×4 devices for superior storage performance.

Xtreme Storage Performance

With the new PCIe 4.0 controller, AORUS Gen 4 SSD delivers blazing speeds: up to 5,000 MB/s for sequential read, and up to 4,400MB/s sequential write. Sequential Read performance of PCIe 4.0 SSDs is up to 40% faster than PCIe 3.0 SSDs. Get ready to enter the next generation of computing with faster and smoother, gaming, streaming, and graphics intensive rendering.
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Product Specification of AORUS Gen4 SSD 1TB

  • Interface
    PCI-Express 4.0×4, NVMe 1.3
  • Form Factor
    M.2 2280
  • Total Capacity
    1000GB
  • NAND
    3D TLC NAND Flash
  • External DDR Cache
    DDR4 1GB
  • Sequential Read speed
    Up to 5000 MB/s
  • Sequential Write speed
    Up to 4400 MB/s
  • Random Read IOPS
    up to 750k
  • Random Write IOPS
    up to 700k
  • Dimension
    80 x 22 x 2.3 mm
  • Mean time between failure (MTBF)
    1.77 million hours
  • Power Consumption (Active)
    Average: R : 6.6W; W : 6.4W
  • Power Consumption (Idle)
    18.8mw
  • Temperature (Operating)
    0°C to 70°C
  • Temperature (Storage)
    -40°C to 85°C

 

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